| 세션명 | 대학원생 구두발표(토론I): 포스트 분자전자 소재와 소자 기술 |
|---|---|
| 발표장 | 제8-1회장 |
| 논문코드 | OD1-4 |
| 발표일 | 2024-04-3 |
| 발표시간 | 13:30-13:40 |
| 논문제목 | Systematic Enhancement of n-Type s-SWNT-FETs via Size-Selective Anion Doping: Mechanisms and Performance Outcomes |
| 발표자 | 양동성 |
| 발표자 소속 | 광주과학기술원 |
| 저자 | 양동성, 이승훈1, 김동유† |
| 소속 | 광주과학기술원; 1공주대학교 |
| 논문초록 | Addressing the inherent challenges of semiconducting single-walled carbon nanotube (s-SWNT) networks, such as roughness and van der Waals gaps, we investigated the enhancement of n-type doped s-SWNT field-effect transistors (FETs). Utilizing anion-π interactions, we achieved high performance s-SWNT-FETs with electron mobility of 39.4 cm2V-1s-1 maintaining high current on/off ratios (>104). The fine-tuned Fermi level was achieved using bilayer doping, resulting in reduced channel and contact resistances, demonstrating improved stability upon bias stress and bending tests. We confirmed the effectiveness of size-selective anion doping in converting s-SWNTs from ambipolar to n-type behavior. The doping effects were systematically revealed by Raman and UV-Vis-nIR spectroscopy. This study offers a novel perspective on enhancing s-SWNT-FETs, highlighting the potential for scalable, high-performance, and flexible electronic devices through strategic anion doping. |
THE POLYMER SOCIETY OF KOREA